tsd2150a low vcesat npn transistor 1/5 version: b11 sot - 89 to - 92 product summary bv cbo 80v bv ceo 50v i c 3a v ce(sat) 0.5v @ i c / i b = 2a / 200ma features low v ce(sat) 0.1 @ i c / i b = 1a / 50ma (typ.) complementary part with tsb1424a ordering information part no. package packing tsd2150acy rm sot-89 1kpcs / 7 reel tsd2150act b0 to-92 1k / bulk tsd2150act a3 to-92 2k / ammo structure epitaxial planar type npn silicon transistor absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cb o 80 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current dc i c 3 a pulse 6 (note1) collector power dissipation sot-89 p d 0.6 w to-92 0.75 operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: 1. single pulse, pw=10ms, duty 50% 2. when mounted on a 40 x 50 x 0.7mm cera mic board. electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = 50ua, i e = 0 bv cbo 80 -- -- v collector-emitter breakdown voltage i c = 1ma, i b = 0 bv ceo 50 -- -- v emitter-base breakdown voltage i e = 50ua, i c = 0 bv ebo 6 -- -- v collector cutoff current v cb = 60v, i e = 0 i cbo -- -- 0.1 ua emitter cutoff current v eb = 3v, i c = 0 i ebo -- -- 0.1 ua collector-emitter saturation voltage i c / i b = 1a / 50ma v ce(sat) -- 0.1 0.25 v i c / i b = 2a / 200ma v ce(sat) -- 0.25 0.5 base-emitter saturation voltage i c / i b = 2a / 200ma v b e(sat) -- -- 2 v dc current transfer ratio v ce = 2v, i c = 100ma h fe 1 180 -- -- v c e = 2v, i c = 500ma h fe 2 200 -- 400 v ce = 2v, i c = 1a h fe 3 150 -- -- transition frequency v ce =5v, i e =0.1a, f=100mhz f t -- 90 -- mhz output capacitance v cb = 10v, f=1mhz cob -- 45 -- pf note: pulse test: pulse width 380us, duty cycle 2% pin definiti on : 1. base 2. collector 3. emitter pin definition : 1. emitter 2. collector 3. base
tsd2150a low vcesat npn transistor 2/5 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. dc current gain figure 2. v ce(sat) v.s. collector current figure 3. v be(sat) v.s. collector current figure 4. power derating curve
tsd2150a low vcesat npn transistor 3/5 version: b11 sot-89 mechanical drawing sot-89 dimension dim millimeters inches min max min max a 4.40 4.60 0.173 0.181 b 1.50 1.7 0.059 0.070 c 2.30 2.60 0.090 0.102 d 0.40 0.52 0.016 0.020 e 1.50 1.50 0.059 0.059 f 3.00 3.00 0.118 0.118 g 0.89 1.20 0.035 0.047 h 4.05 4.25 0.159 0.167 i 1.4 1.6 0.055 0.068 j 0.35 0.44 0.014 0.017
tsd2150a low vcesat npn transistor 4/5 version: b11 to-92 mechanical drawing to-92 dimension dim millimeters inches min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.050 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
tsd2150a low vcesat npn transistor 5/5 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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